F4H3ND
vs
BSO305N
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SHINDENGEN ELECTRIC MANUFACTURING CO LTD
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Category CO2 Kg
8.8
8.8
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
4 A
6 A
Drain-source On Resistance-Max
0.1 Ω
0.035 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e0
e0
Moisture Sensitivity Level
2
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
DUAL GATE, ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
240
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
0.75 W
2 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Additional Feature
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
100 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Pulsed Drain Current-Max (IDM)
24 A
Transistor Application
SWITCHING
Compare F4H3ND with alternatives
Compare BSO305N with alternatives