BSO305N vs NDS9956 feature comparison

BSO305N Infineon Technologies AG

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NDS9956 National Semiconductor Corporation

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 100 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS
DS Breakdown Voltage-Min 30 V 20 V
Drain Current-Max (ID) 6 A 3.5 A
Drain-source On Resistance-Max 0.035 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e0
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2 W 2 W
Pulsed Drain Current-Max (IDM) 24 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2

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