F1T7GH
vs
1N4007GT&A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
CONTINENTAL DEVICE INDIA LTD
Reach Compliance Code
unknown
unknown
Additional Feature
HIGH RELIABILITY, LOW POWER LOSS
Application
EFFICIENCY
LOW POWER
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.3 V
1.1 V
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Pk Forward Current-Max
30 A
30 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
1 A
1 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Reference Standard
AEC-Q101
TS-16949
Rep Pk Reverse Voltage-Max
1000 V
1000 V
Reverse Current-Max
5 µA
5 µA
Reverse Recovery Time-Max
0.5 µs
Surface Mount
NO
NO
Terminal Finish
PURE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
ECCN Code
EAR99
Breakdown Voltage-Min
1000 V
JEDEC-95 Code
DO-41
Reverse Test Voltage
1000 V
Compare F1T7GH with alternatives
Compare 1N4007GT&A with alternatives