EDI8F8257C100B6I vs EMS256K8BMO2-45I feature comparison

EDI8F8257C100B6I White Electronic Designs Corp

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EMS256K8BMO2-45I ELMOS SEMICONDUCTOR AG

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer WHITE ELECTRONIC DESIGNS CORP ELMO SEMICONDUCTOR CORP
Package Description DIP-32 DIP, DIP32,.6
Reach Compliance Code unknown unknown
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 100 ns 45 ns
JESD-30 Code R-XDMA-T32 R-CDMA-T32
Memory Density 2097152 bit 2097152 bit
Memory IC Type SRAM MODULE SRAM MODULE
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 262144 words 262144 words
Number of Words Code 256000 256000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 256KX8 256KX8
Package Body Material UNSPECIFIED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
I/O Type COMMON
JESD-609 Code e0
Output Characteristics 3-STATE
Package Code DIP
Package Equivalence Code DIP32,.6
Standby Current-Max 0.004 A
Standby Voltage-Min 4.5 V
Supply Current-Max 0.14 mA
Terminal Finish TIN LEAD
Terminal Pitch 2.54 mm

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Compare EMS256K8BMO2-45I with alternatives