EDI88130CS55CI vs K6T1008C2E-DB55 feature comparison

EDI88130CS55CI Mercury Systems Inc

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K6T1008C2E-DB55 Samsung Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MERCURY SYSTEMS INC SAMSUNG SEMICONDUCTOR INC
Package Description DIP-32 0.600 INCH, DIP-32
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 55 ns 55 ns
JESD-30 Code R-CDIP-T32 R-PDIP-T32
Length 40.64 mm 41.91 mm
Memory Density 1048576 bit 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 131072 words 131072 words
Number of Words Code 128000 128000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C
Organization 128KX8 128KX8
Package Body Material CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY
Package Code DIP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Seated Height-Max 3.937 mm 5.08 mm
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade INDUSTRIAL COMMERCIAL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Width 15.24 mm 15.24 mm
Base Number Matches 1 2
Part Package Code DIP
Pin Count 32
I/O Type COMMON
Moisture Sensitivity Level 1
Output Characteristics 3-STATE
Package Equivalence Code DIP32,.6
Qualification Status Not Qualified
Standby Voltage-Min 2 V
Supply Current-Max 0.05 mA

Compare EDI88130CS55CI with alternatives

Compare K6T1008C2E-DB55 with alternatives