EDI8465LP25QB
vs
MSM832TLMB-10
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
ELECTRONIC DESIGNS INC
|
MOSAIC SEMICONDUCTOR INC
|
Reach Compliance Code |
unknown
|
unknown
|
Access Time-Max |
25 ns
|
100 ns
|
I/O Type |
COMMON
|
|
JESD-30 Code |
R-CDIP-T24
|
R-CDIP-T28
|
JESD-609 Code |
e0
|
|
Memory Density |
262144 bit
|
262144 bit
|
Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
Memory Width |
4
|
8
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
24
|
28
|
Number of Words |
65536 words
|
32768 words
|
Number of Words Code |
64000
|
32000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
125 °C
|
125 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Organization |
64KX4
|
32KX8
|
Output Characteristics |
3-STATE
|
|
Output Enable |
NO
|
YES
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Code |
DIP
|
DIP
|
Package Equivalence Code |
DIP24,.3
|
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Screening Level |
38535Q/M;38534H;883B
|
MIL-STD-883
|
Standby Current-Max |
0.0005 A
|
|
Standby Voltage-Min |
2 V
|
2 V
|
Supply Current-Max |
0.12 mA
|
|
Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
Surface Mount |
NO
|
NO
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
MILITARY
|
MILITARY
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Pitch |
2.54 mm
|
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
DIP
|
Package Description |
|
,
|
Pin Count |
|
28
|
ECCN Code |
|
3A001.A.2.C
|
HTS Code |
|
8542.32.00.41
|
|
|
|
Compare EDI8465LP25QB with alternatives
Compare MSM832TLMB-10 with alternatives