EDB5432BEBH-1DAUT-F-R
vs
EDB5432BEBH-1DAUT-F
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
MICRON TECHNOLOGY INC
|
Package Description |
VFBGA,
|
VFBGA-134
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.28
|
8542.32.00.28
|
Factory Lead Time |
18 Weeks
|
|
Access Mode |
SINGLE BANK PAGE BURST
|
SINGLE BANK PAGE BURST
|
Additional Feature |
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
|
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
|
JESD-30 Code |
R-PBGA-B134
|
R-PBGA-B134
|
Length |
11.5 mm
|
11.5 mm
|
Memory Density |
536870912 bit
|
536870912 bit
|
Memory IC Type |
DDR DRAM
|
LPDDR2 DRAM
|
Memory Width |
32
|
32
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
134
|
134
|
Number of Words |
16777216 words
|
16777216 words
|
Number of Words Code |
16000000
|
16000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
125 °C
|
125 °C
|
Operating Temperature-Min |
-40 °C
|
-40 °C
|
Organization |
16MX32
|
16MX32
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
VFBGA
|
VFBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Seated Height-Max |
1 mm
|
1 mm
|
Self Refresh |
YES
|
YES
|
Supply Voltage-Max (Vsup) |
1.3 V
|
1.3 V
|
Supply Voltage-Min (Vsup) |
1.14 V
|
1.14 V
|
Supply Voltage-Nom (Vsup) |
1.2 V
|
1.2 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
AUTOMOTIVE
|
AUTOMOTIVE
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
0.65 mm
|
0.65 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Width |
10 mm
|
10 mm
|
Base Number Matches |
1
|
1
|
|
|
|
Compare EDB5432BEBH-1DAUT-F-R with alternatives
Compare EDB5432BEBH-1DAUT-F with alternatives