EDB104S vs EDF1DS/45 feature comparison

EDB104S Galaxy Microelectronics

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EDF1DS/45 Vishay Semiconductors

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Rohs Code Yes No
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD VISHAY SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 200 V 200 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.05 V
Non-rep Pk Forward Current-Max 30 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Recovery Time-Max 0.05 µs
Surface Mount YES YES
Base Number Matches 3 3
Package Description R-PDSO-G4
Pin Count 4
HTS Code 8541.10.00.80
Diode Element Material SILICON
JESD-30 Code R-PDSO-G4
JESD-609 Code e0
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL

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