EDB104S
vs
KBP103GC2
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Breakdown Voltage-Min
200 V
200 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1 V
Non-rep Pk Forward Current-Max
30 A
30 A
Number of Elements
4
4
Number of Phases
1
1
Operating Temperature-Max
150 °C
150 °C
Output Current-Max
1 A
1 A
Peak Reflow Temperature (Cel)
260
Rep Pk Reverse Voltage-Max
200 V
200 V
Reverse Recovery Time-Max
0.05 µs
Surface Mount
YES
NO
Base Number Matches
3
1
HTS Code
8541.10.00.80
Diode Element Material
SILICON
JESD-30 Code
R-PSIP-W4
JESD-609 Code
e3
Number of Terminals
4
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Reference Standard
UL RECOGNIZED
Terminal Finish
MATTE TIN
Terminal Form
WIRE
Terminal Position
SINGLE
Compare EDB104S with alternatives
Compare KBP103GC2 with alternatives