ECS2516AFCN-A-Y3
vs
MT48LC16M16A2B4-7E:GTR
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
ELPIDA MEMORY INC
|
MICRON TECHNOLOGY INC
|
Part Package Code |
DIE
|
|
Package Description |
DIE,
|
VFBGA,
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.24
|
8542.32.00.24
|
Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
Access Time-Max |
5.4 ns
|
5.4 ns
|
Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
JESD-30 Code |
R-XUUC-N
|
S-PBGA-B54
|
Memory Density |
268435456 bit
|
268435456 bit
|
Memory IC Type |
SYNCHRONOUS DRAM
|
SYNCHRONOUS DRAM
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Words |
16777216 words
|
16777216 words
|
Number of Words Code |
16000000
|
16000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
70 °C
|
Operating Temperature-Min |
|
|
Organization |
16MX16
|
16MX16
|
Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
Package Code |
DIE
|
VFBGA
|
Package Shape |
RECTANGULAR
|
SQUARE
|
Package Style |
UNCASED CHIP
|
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
Qualification Status |
Not Qualified
|
|
Self Refresh |
YES
|
YES
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
OTHER
|
COMMERCIAL
|
Terminal Form |
NO LEAD
|
BALL
|
Terminal Position |
UPPER
|
BOTTOM
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
Yes
|
Length |
|
8 mm
|
Number of Terminals |
|
54
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Seated Height-Max |
|
1 mm
|
Terminal Pitch |
|
0.8 mm
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Width |
|
8 mm
|
|
|
|
Compare ECS2516AFCN-A-Y3 with alternatives
Compare MT48LC16M16A2B4-7E:GTR with alternatives