DTC123E vs PDTC123EEF feature comparison

DTC123E Rochester Electronics LLC

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PDTC123EEF NXP Semiconductors

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC NXP SEMICONDUCTORS
Part Package Code TO-92 SC-89
Package Description TO-226AA, 3 PIN SMALL OUTLINE, R-PDSO-F3
Pin Count 3 3
Reach Compliance Code unknown unknown
Samacsys Description Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Samacsys Manufacturer Rochester Electronics
Samacsys Modified On 2023-02-22 15:27:29
Category CO2 Kg 8.8 8.8
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 8 30
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3 R-PDSO-F3
JESD-609 Code e0 e3
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style CYLINDRICAL SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD TIN
Terminal Form THROUGH-HOLE FLAT
Terminal Position BOTTOM DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 3
ECCN Code EAR99
EU RoHS Version RoHS 2 (2015/863/EU)
Conflict Mineral Status DRC Conflict Free Undeterminable
Conflict Mineral Status Source FMD
Power Dissipation-Max (Abs) 0.25 W

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