DTC114TM
vs
DTC114TU3HZGT106
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
ROHM CO LTD
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Base Number Matches |
3
|
1
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G3
|
| Date Of Intro |
|
2018-04-23
|
| Samacsys Manufacturer |
|
ROHM Semiconductor
|
| Additional Feature |
|
BUILT IN BIAS RESISTOR
|
| Collector Current-Max (IC) |
|
0.1 A
|
| Collector-Emitter Voltage-Max |
|
50 V
|
| Configuration |
|
SINGLE WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
|
100
|
| JESD-30 Code |
|
R-PDSO-G3
|
| JESD-609 Code |
|
e3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Polarity/Channel Type |
|
NPN
|
| Power Dissipation-Max (Abs) |
|
0.35 W
|
| Surface Mount |
|
YES
|
| Terminal Finish |
|
Tin (Sn)
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
| Transition Frequency-Nom (fT) |
|
250 MHz
|
| VCEsat-Max |
|
0.3 V
|
|
|
|
Compare DTC114TM with alternatives
Compare DTC114TU3HZGT106 with alternatives