DTC114EU3T106 vs DTC114YUBHZGTL feature comparison

DTC114EU3T106 ROHM Semiconductor

Buy Now Datasheet

DTC114YUBHZGTL ROHM Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Not Recommended
Ihs Manufacturer ROHM CO LTD ROHM CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer ROHM Semiconductor ROHM Semiconductor
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1.0 BUILT IN BIAS RESISTANCE RATIO IS 4.7
Collector Current-Max (IC) 0.1 A 0.1 A
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 68
JESD-30 Code R-PDSO-G3 R-PDSO-F3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.2 W
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 1
Package Description SMALL OUTLINE, R-PDSO-F3
HTS Code 8541.21.00.75
Date Of Intro 2016-03-22
Collector-Emitter Voltage-Max 50 V
Moisture Sensitivity Level 1
Power Dissipation Ambient-Max 0.2 W
Reference Standard AEC-Q101

Compare DTC114EU3T106 with alternatives

Compare DTC114YUBHZGTL with alternatives