DTC114YUBHZGTL
vs
DTC114YUA
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Not Recommended
Active
Ihs Manufacturer
ROHM CO LTD
SECOS CORP
Package Description
SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.75
8541.21.00.75
Date Of Intro
2016-03-22
Samacsys Manufacturer
ROHM Semiconductor
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 4.7
BUILT IN BIAS RESISTANCE RATIO IS 4.7
Collector Current-Max (IC)
0.1 A
0.07 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
68
68
JESD-30 Code
R-PDSO-F3
R-PDSO-G3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
0.2 W
0.2 W
Reference Standard
AEC-Q101
Surface Mount
YES
YES
Terminal Form
FLAT
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
250 MHz
250 MHz
Base Number Matches
1
8
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
0.2 W
Compare DTC114YUBHZGTL with alternatives
Compare DTC114YUA with alternatives