DTB123YK vs BCR555 feature comparison

DTB123YK ROHM Semiconductor

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BCR555 Infineon Technologies AG

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active End Of Life
Ihs Manufacturer ROHM CO LTD INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G3 ROHS COMPLIANT PACKAGE-3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.5 BUILT-IN BIAS RESISTOR RATIO 0.22
Collector Current-Max (IC) 0.5 A 0.5 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 56 70
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 5
Pin Count 3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Transition Frequency-Nom (fT) 150 MHz

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