BCR555 vs PDTB114ET feature comparison

BCR555 Infineon Technologies AG

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PDTB114ET NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code End Of Life Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG NXP SEMICONDUCTORS
Package Description ROHS COMPLIANT PACKAGE-3 SOT-23, 3 PIN
Pin Count 3 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO 0.22 BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.5 A 0.5 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70 56
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP PNP
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 150 MHz 100 MHz
Base Number Matches 2 3
Part Package Code SOT-23
Collector-Base Capacitance-Max 9 pF
VCEsat-Max 0.3 V

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