DTA114YE vs DTA114YETR feature comparison

DTA114YE ROHM Semiconductor

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DTA114YETR ROHM Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROHM CO LTD ROHM CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Additional Feature DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7
Collector Current-Max (IC) 0.07 A 0.07 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 68 68
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e1 e1
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP PNP
Power Dissipation Ambient-Max 0.2 W
Power Dissipation-Max (Abs) 0.15 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu) TIN SILVER COPPER
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 8 1
Case Connection COLLECTOR
Operating Temperature-Max 150 °C
VCEsat-Max 0.3 V

Compare DTA114YE with alternatives

Compare DTA114YETR with alternatives