DTA023JEBTL vs DTA123JG-AL3-R feature comparison

DTA023JEBTL ROHM Semiconductor

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DTA123JG-AL3-R Unisonic Technologies Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROHM CO LTD UNISONIC TECHNOLOGIES CO LTD
Package Description ROHS COMPLIANT, EMT3F, SC-89, 3 PIN SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer ROHM Semiconductor
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 21 BUILT-IN BIAS RESISTOR
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 80
JESD-30 Code R-PDSO-F3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type PNP PNP
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 1
Pin Count 3
Power Dissipation-Max (Abs) 0.2 W

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