DS26C31TN
vs
HS1-26C31RH-8
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
RENESAS ELECTRONICS CORP
|
| Package Description |
PLASTIC, DIP-16
|
DIP,
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.39.00.01
|
8542.39.00.01
|
| Differential Output |
YES
|
YES
|
| Driver Number of Bits |
4
|
4
|
| High Level Input Current-Max |
0.000001 A
|
|
| Input Characteristics |
STANDARD
|
STANDARD
|
| Interface IC Type |
LINE DRIVER
|
LINE DRIVER
|
| Interface Standard |
EIA-422
|
EIA-422
|
| JESD-30 Code |
R-PDIP-T16
|
R-CDIP-T16
|
| JESD-609 Code |
e0
|
e0
|
| Length |
19.304 mm
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Functions |
4
|
4
|
| Number of Terminals |
16
|
16
|
| Operating Temperature-Max |
85 °C
|
125 °C
|
| Operating Temperature-Min |
-40 °C
|
-55 °C
|
| Output Characteristics |
3-STATE
|
|
| Output Polarity |
COMPLEMENTARY
|
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP16,.3
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Receive Delay-Max |
|
|
| Seated Height-Max |
5.08 mm
|
5.08 mm
|
| Supply Voltage-Nom |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
MILITARY
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
|
| Transmit Delay-Max |
11 ns
|
|
| Width |
7.62 mm
|
7.62 mm
|
| Base Number Matches |
2
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
SBDIP
|
| Pin Count |
|
16
|
| Manufacturer Package Code |
|
D16.3
|
| Samacsys Manufacturer |
|
Renesas Electronics
|
| Screening Level |
|
MIL-PRF-38535 Class Q
|
| Total Dose |
|
300k Rad(Si) V
|
|
|
|
Compare DS26C31TN with alternatives
Compare HS1-26C31RH-8 with alternatives