DS2003TN
vs
DS2003CN
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
NATIONAL SEMICONDUCTOR CORP
|
Package Description |
PLASTIC, DIP-16
|
IN-LINE, R-PDIP-T16
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
LOGIC LEVEL COMPATIBLE
|
Collector Current-Max (IC) |
0.5 A
|
0.5 A
|
Collector-Emitter Voltage-Max |
55 V
|
55 V
|
Configuration |
COMPLEX
|
COMPLEX
|
JESD-30 Code |
R-PDIP-T16
|
R-PDIP-T16
|
JESD-609 Code |
e0
|
e0
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
7
|
7
|
Number of Terminals |
16
|
16
|
Operating Temperature-Max |
105 °C
|
85 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
NPN
|
NPN
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn85Pb15)
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
40
|
40
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
VCEsat-Max |
1.6 V
|
1.6 V
|
Base Number Matches |
1
|
1
|
HTS Code |
|
8542.39.00.01
|
Operating Temperature-Min |
|
-40 °C
|
|
|
|
Compare DS2003TN with alternatives
Compare DS2003CN with alternatives