DN2540N8-G
vs
DN2540N3P017
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
SUPERTEX INC
Package Description
,
CYLINDRICAL, O-PBCY-T3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
8541.29.00.95
Factory Lead Time
44 Weeks, 1 Day
Samacsys Manufacturer
Microchip
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
0.17 A
0.17 A
Drain-source On Resistance-Max
25 Ω
25 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
5 pF
5 pF
JEDEC-95 Code
TO-243AA
TO-92
JESD-30 Code
R-PSSO-F3
O-PBCY-T3
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
DEPLETION MODE
DEPLETION MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
CYLINDRICAL
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
1.6 W
Pulsed Drain Current-Max (IDM)
0.5 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
Matte Tin (Sn) - annealed
TIN LEAD
Terminal Form
FLAT
THROUGH-HOLE
Terminal Position
SINGLE
BOTTOM
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
35 ns
Turn-on Time-Max (ton)
25 ns
Base Number Matches
1
1
Additional Feature
LOW THRESHOLD
Power Dissipation Ambient-Max
1 W
Compare DN2540N8-G with alternatives
Compare DN2540N3P017 with alternatives