DM77SR181J
vs
63S841J
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
MONOLITHIC MEMORIES
|
| Package Description |
DIP, DIP24,.3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8542.32.00.71
|
|
| JESD-30 Code |
R-GDIP-T24
|
R-GDIP-T18
|
| JESD-609 Code |
e0
|
e0
|
| Memory Density |
8192 bit
|
8192 bit
|
| Memory IC Type |
OTP ROM
|
OTP ROM
|
| Memory Width |
8
|
4
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
24
|
18
|
| Number of Words |
1024 words
|
2048 words
|
| Number of Words Code |
1000
|
2000
|
| Operating Mode |
SYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
75 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Organization |
1KX8
|
2KX4
|
| Output Characteristics |
3-STATE
|
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP24,.3
|
DIP18,.3
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
4.572 mm
|
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.25 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.75 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
BIPOLAR
|
CMOS
|
| Temperature Grade |
MILITARY
|
COMMERCIAL EXTENDED
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
15.24 mm
|
|
| Base Number Matches |
3
|
3
|
| Access Time-Max |
|
50 ns
|
| Supply Current-Max |
|
0.15 mA
|
|
|
|
Compare DM77SR181J with alternatives
Compare 63S841J with alternatives