DI1010S_T0_10001 vs FDB107S feature comparison

DI1010S_T0_10001 PanJit Semiconductor

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FDB107S Galaxy Microelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer PAN JIT INTERNATIONAL INC CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description DIP-4
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Breakdown Voltage-Min 1000 V 1000 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Base Number Matches 2 1

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