DCX100NS-7
vs
RN4601TE85N
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
DIODES INC
TOSHIBA CORP
Package Description
SMALL OUTLINE, R-PDSO-F6
SMALL OUTLINE, R-PDSO-G6
Pin Count
6
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 10
BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
30
30
JESD-30 Code
R-PDSO-F6
R-PDSO-G6
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
2
Number of Terminals
6
6
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity/Channel Type
NPN AND PNP
NPN AND PNP
Power Dissipation-Max (Abs)
0.15 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Terminal Form
FLAT
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
250 MHz
250 MHz
Base Number Matches
1
1
Category CO2 Kg
8.8
EU RoHS Version
RoHS 2 (2015/863/EU)
Conflict Mineral Status
DRC Conflict Free Undeterminable
Conflict Mineral Status Source
Conflict Minerals Statement
Collector-Base Capacitance-Max
6 pF
VCEsat-Max
0.3 V
Compare DCX100NS-7 with alternatives
Compare RN4601TE85N with alternatives