RN4601TE85N
vs
EMF23T2R
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
TOSHIBA CORP
ROHM CO LTD
Package Description
SMALL OUTLINE, R-PDSO-G6
SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Base Capacitance-Max
6 pF
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
30
30
JESD-30 Code
R-PDSO-G6
R-PDSO-F6
Number of Elements
2
2
Number of Terminals
6
6
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
NPN AND PNP
NPN AND PNP
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
FLAT
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
250 MHz
250 MHz
VCEsat-Max
0.3 V
Base Number Matches
1
1
Rohs Code
Part Package Code
SC-107
Pin Count
6
JESD-609 Code
e2
Power Dissipation-Max (Abs)
0.15 W
Terminal Finish
TIN COPPER
Compare RN4601TE85N with alternatives
Compare EMF23T2R with alternatives