DB152G
vs
DI151S_R2_10001
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
PAN JIT INTERNATIONAL INC
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Category CO2 Kg
8.4
EU RoHS Version
RoHS 2 (2011/65/EU)
Breakdown Voltage-Min
100 V
100 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
4
4
Number of Phases
1
1
Operating Temperature-Max
150 °C
125 °C
Output Current-Max
1.5 A
1.5 A
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Rep Pk Reverse Voltage-Max
100 V
100 V
Surface Mount
NO
YES
Base Number Matches
1
1
Package Description
R-PDSO-G4
HTS Code
8541.10.00.80
Diode Element Material
SILICON
JESD-30 Code
R-PDSO-G4
Number of Terminals
4
Operating Temperature-Min
-50 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Reference Standard
UL RECOGNIZED
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare DB152G with alternatives
Compare DI151S_R2_10001 with alternatives