DB151 vs KBP151GC2G feature comparison

DB151 Formosa Microsemi Co Ltd

Buy Now Datasheet

KBP151GC2G Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer FORMOSA MICROSEMI CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
JESD-30 Code R-PDIP-T4 R-PSIP-W4
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1.5 A 1.5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount NO NO
Terminal Form THROUGH-HOLE WIRE
Terminal Position DUAL SINGLE
Base Number Matches 4 1
Rohs Code Yes
Package Description R-PSIP-W4
Breakdown Voltage-Min 50 V
JESD-609 Code e3
Terminal Finish MATTE TIN

Compare DB151 with alternatives

Compare KBP151GC2G with alternatives