D2148H-3
vs
HM3-6514-5
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INTEL CORP
HARRIS SEMICONDUCTOR
Package Description
DIP, DIP18,.3
DIP, DIP18,.3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
55 ns
370 ns
I/O Type
COMMON
COMMON
JESD-30 Code
R-XDIP-T18
R-PDIP-T18
JESD-609 Code
e0
e0
Memory Density
4096 bit
4096 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
4
4
Number of Terminals
18
18
Number of Words
1024 words
1024 words
Number of Words Code
1000
1000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
Organization
1KX4
1KX4
Output Characteristics
3-STATE
3-STATE
Package Body Material
CERAMIC
PLASTIC/EPOXY
Package Code
DIP
DIP
Package Equivalence Code
DIP18,.3
DIP18,.3
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Supply Current-Max
0.15 mA
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
MOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Finish
Tin/Lead (Sn/Pb)
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Base Number Matches
5
1
Standby Current-Max
0.0002 A
Compare D2148H-3 with alternatives
Compare HM3-6514-5 with alternatives