CY7C1486BV33-250BGI
vs
CY7C1486BV33-250BGXI
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
CYPRESS SEMICONDUCTOR CORP
CYPRESS SEMICONDUCTOR CORP
Reach Compliance Code
compliant
compliant
ECCN Code
3A991.B.2.A
3A991.B.2.A
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
3 ns
3 ns
Clock Frequency-Max (fCLK)
250 MHz
250 MHz
I/O Type
COMMON
COMMON
JESD-30 Code
R-PBGA-B209
R-PBGA-B209
JESD-609 Code
e0
e1
Memory Density
75497472 bit
75497472 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
72
72
Number of Terminals
209
209
Number of Words
1048576 words
1048576 words
Number of Words Code
1000000
1000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
85 °C
85 °C
Operating Temperature-Min
-40 °C
-40 °C
Organization
1MX72
1MX72
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
BGA
BGA
Package Equivalence Code
BGA209,11X19,40
BGA209,11X19,40
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY
GRID ARRAY
Parallel/Serial
PARALLEL
PARALLEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Qualification Status
Not Qualified
Not Qualified
Standby Voltage-Min
3.14 V
3.14 V
Supply Current-Max
0.5 mA
0.5 mA
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
INDUSTRIAL
Terminal Finish
Tin/Lead (Sn/Pb)
TIN SILVER COPPER
Terminal Form
BALL
BALL
Terminal Pitch
1 mm
1 mm
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
20
Base Number Matches
1
1
Moisture Sensitivity Level
3
Compare CY7C1486BV33-250BGI with alternatives
Compare CY7C1486BV33-250BGXI with alternatives