CY7C1061G30-10ZSXI
vs
CY7C1061G30-10ZSXI
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
CYPRESS SEMICONDUCTOR CORP
|
INFINEON TECHNOLOGIES AG
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
3A991.B.2.B
|
|
| HTS Code |
8542.32.00.41
|
|
| Access Time-Max |
10 ns
|
10 ns
|
| JESD-30 Code |
R-PDSO-G54
|
R-PDSO-G54
|
| Length |
22.415 mm
|
22.415 mm
|
| Memory Density |
16777216 bit
|
16777216 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
16
|
16
|
| Moisture Sensitivity Level |
3
|
3
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
54
|
54
|
| Number of Words |
1048576 words
|
1048576 words
|
| Number of Words Code |
1000000
|
1000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
1MX16
|
1MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TSOP2
|
TSOP2
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE, THIN PROFILE
|
SMALL OUTLINE, THIN PROFILE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
2.2 V
|
2.2 V
|
| Supply Voltage-Nom (Vsup) |
3 V
|
3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Finish |
PURE TIN
|
Pure Tin (Sn)
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
10.16 mm
|
10.16 mm
|
| Base Number Matches |
2
|
2
|
| Factory Lead Time |
|
2 Days
|
| Samacsys Manufacturer |
|
Infineon
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
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