CSD19531KCS
vs
APT10M09LVFR
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
TEXAS INSTRUMENTS INC
|
MICROCHIP TECHNOLOGY INC
|
Package Description |
PACKAGE-3
|
FLANGE MOUNT, R-PSFM-T3
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Samacsys Manufacturer |
Texas Instruments
|
|
Additional Feature |
AVALANCHE RATED
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
180 mJ
|
3000 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
100 A
|
100 A
|
Drain-source On Resistance-Max |
0.0088 Ω
|
0.009 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
17 pF
|
|
JEDEC-95 Code |
TO-220
|
TO-264AA
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
179 W
|
625 W
|
Pulsed Drain Current-Max (IDM) |
285 A
|
400 A
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
3
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Qualification Status |
|
Not Qualified
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare CSD19531KCS with alternatives
Compare APT10M09LVFR with alternatives