APT10M09LVFR
vs
BUK9610-100B,118
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
NXP SEMICONDUCTORS
|
Package Description |
FLANGE MOUNT, R-PSFM-T3
|
PLASTIC, D2PAK-3
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas) |
3000 mJ
|
629 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
100 A
|
75 A
|
Drain-source On Resistance-Max |
0.009 Ω
|
0.011 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-264AA
|
|
JESD-30 Code |
R-PSFM-T3
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
245
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
625 W
|
300 W
|
Pulsed Drain Current-Max (IDM) |
400 A
|
438 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
YES
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
2
|
Part Package Code |
|
D2PAK
|
Pin Count |
|
3
|
Manufacturer Package Code |
|
SOT404
|
HTS Code |
|
8541.29.00.75
|
Factory Lead Time |
|
4 Weeks
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Terminal Finish |
|
TIN
|
|
|
|
Compare APT10M09LVFR with alternatives
Compare BUK9610-100B,118 with alternatives