CQ220I-12N
vs
BTA12-800BW
feature comparison
All Stats
Differences Only
Pbfree Code
No
Rohs Code
No
Yes
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
CONTINENTAL DEVICE INDIA LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.30.00.80
8541.30.00.80
Case Connection
ISOLATED
Configuration
SINGLE
SINGLE
Critical Rate of Rise of Off-State Voltage-Min
500 V/us
1000 V/us
DC Gate Trigger Current-Max
50 mA
50 mA
DC Gate Trigger Voltage-Max
2.5 V
1.3 V
Holding Current-Max
100 mA
60 mA
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
Leakage Current-Max
2.5 mA
0.005 mA
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
125 °C
Operating Temperature-Min
-65 °C
-40 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Qualification Status
Not Qualified
RMS On-state Current-Max
12 A
12 A
Repetitive Peak Off-state Voltage
800 V
800 V
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Trigger Device Type
4 QUADRANT LOGIC LEVEL TRIAC
TRIAC
Base Number Matches
1
3
Critical Rate of Rise of Commutation Voltage-Min
12 V/us
JEDEC-95 Code
TO-220AB
On-State Voltage-Max
1.55 V
Reference Standard
IATF 16949
Repetitive Peak Off-state Leakage Current-Max
1000 µA
Repetitive Peak Reverse Voltage
800 V
Compare CQ220I-12N with alternatives