CNS1N5285 vs JAN1N5285 feature comparison

CNS1N5285 Microsemi Corporation

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JAN1N5285 Cobham PLC

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP KNOX SEMICONDUCTORS INC
Part Package Code DIE DO-7
Package Description DIE-1 O-LALF-W2
Pin Count 1 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.40 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type CURRENT REGULATOR DIODE CURRENT REGULATOR DIODE
JESD-30 Code S-XUUC-N1 O-LALF-W2
JESD-609 Code e0 e0
Knee Impedance-Max 1950000 Ω 1950000 Ω
Limiting Voltage-Max 1 V 1 V
Number of Elements 1 1
Number of Terminals 1 2
Operating Temperature-Max 175 °C 200 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material UNSPECIFIED GLASS
Package Shape SQUARE ROUND
Package Style UNCASED CHIP LONG FORM
Power Dissipation-Max 0.475 W 0.5 W
Qualification Status Not Qualified Not Qualified
Regulation Current-Nom (Ireg) 0.27 mA 0.27 mA
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount YES NO
Technology FIELD EFFECT FIELD EFFECT
Terminal Finish TIN LEAD TIN LEAD
Terminal Form NO LEAD WIRE
Terminal Position UPPER AXIAL
Base Number Matches 1 6
Case Connection ISOLATED
Dynamic Impedance-Min 14000000 Ω
JEDEC-95 Code DO-7
Reference Standard MIL-19500/463

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