CBR1F-D020S
vs
EDB104S
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Contact Manufacturer
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
GALAXY SEMI-CONDUCTOR CO LTD
Part Package Code
DIP
Package Description
SMDIP-4
Pin Count
4
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
Breakdown Voltage-Min
200 V
200 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.3 V
1 V
JESD-30 Code
R-PDSO-G4
JESD-609 Code
e0
Non-rep Pk Forward Current-Max
50 A
30 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
Output Current-Max
1 A
1 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
200 V
200 V
Reverse Current-Max
5 µA
Reverse Recovery Time-Max
0.2 µs
0.05 µs
Reverse Test Voltage
200 V
Surface Mount
YES
YES
Technology
SCHOTTKY
Terminal Finish
Tin/Lead (Sn80Pb20)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
3
Compare CBR1F-D020S with alternatives
Compare EDB104S with alternatives