BZW06-28 vs BZW04-273B feature comparison

BZW06-28 Galaxy Microelectronics

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BZW04-273B Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-15
Reach Compliance Code unknown not_compliant
Clamping Voltage-Max 45.7 V 438 V
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 28.2 V 273 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Base Number Matches 2 18
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 336 V
Breakdown Voltage-Min 304 V
Breakdown Voltage-Nom 320 V
Case Connection ISOLATED
Configuration SINGLE
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 1 W
Terminal Finish Matte Tin (Sn)
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare BZW04-273B with alternatives