BZW04-273B
vs
BZW06-28B0
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
Breakdown Voltage-Nom
320 V
33 V
Clamping Voltage-Max
438 V
45.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-41
DO-204AC
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
400 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1.7 W
Rep Pk Reverse Voltage-Max
273 V
28.2 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
15
1
Package Description
O-PALF-W2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
34.7 V
Breakdown Voltage-Min
31.4 V
Case Connection
ISOLATED
JESD-609 Code
e3
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Terminal Finish
MATTE TIN
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