BZW04-37BB0
vs
P4KE47A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
INTERNATIONAL SEMICONDUCTOR INC
Package Description
O-PALF-W2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
LOW IMPEDANCE
Breakdown Voltage-Max
45.2 V
49.4 V
Breakdown Voltage-Min
40.9 V
44.7 V
Breakdown Voltage-Nom
43.05 V
47 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
59.3 V
64.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-204AL
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Rep Pk Reverse Voltage-Max
36.8 V
40 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
1
Qualification Status
Not Qualified
Reverse Current-Max
5 µA
Compare BZW04-37BB0 with alternatives
Compare P4KE47A with alternatives