BZW04-37BB0 vs BZW04-376BRL feature comparison

BZW04-37BB0 Taiwan Semiconductor

Buy Now Datasheet

BZW04-376BRL STMicroelectronics

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD STMICROELECTRONICS
Package Description O-PALF-W2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max 45.2 V
Breakdown Voltage-Min 40.9 V 418 V
Breakdown Voltage-Nom 43.05 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 59.3 V 776 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1.7 W
Rep Pk Reverse Voltage-Max 36.8 V 376 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn) - annealed
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Part Package Code DO-15
Pin Count 2
Factory Lead Time 25 Weeks
Samacsys Manufacturer STMicroelectronics
Diode Capacitance-Min 35 pF
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Reverse Current-Max 5 µA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare BZW04-37BB0 with alternatives

Compare BZW04-376BRL with alternatives