BZV55C10-GT1 vs BZV55C10 feature comparison

BZV55C10-GT1 Sangdest Microelectronics (Nanjing) Co Ltd

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BZV55C10 YAGEO Corporation

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD PHILIPS COMPONENTS
Package Description O-LELF-R2
Reach Compliance Code unknown unknown
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JESD-30 Code O-LELF-R2 O-LELF-R2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 10 V 10 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Voltage Tol-Max 6% 5%
Working Test Current 5 mA 5 mA
Base Number Matches 1 3
ECCN Code EAR99
HTS Code 8541.10.00.50
Reverse Current-Max 0.2 µA
Voltage Temp Coeff-Max 8 mV/°C

Compare BZV55C10-GT1 with alternatives

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