BZV55C10-GT1
vs
BZV55C10TRL13
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
NXP SEMICONDUCTORS
Package Description
O-LELF-R2
O-LELF-R2
Reach Compliance Code
unknown
unknown
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
JESD-30 Code
O-LELF-R2
O-LELF-R2
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.5 W
0.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Voltage-Nom
10 V
10 V
Surface Mount
YES
YES
Technology
ZENER
ZENER
Terminal Form
WRAP AROUND
WRAP AROUND
Terminal Position
END
END
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Voltage Tol-Max
6%
5%
Working Test Current
5 mA
5 mA
Base Number Matches
2
2
Pbfree Code
ECCN Code
EAR99
HTS Code
8541.10.00.50
JESD-609 Code
e3
Reverse Current-Max
0.2 µA
Terminal Finish
TIN
Voltage Temp Coeff-Max
8 mV/°C
Compare BZV55C10-GT1 with alternatives
Compare BZV55C10TRL13 with alternatives