BZT55C3V0L1G vs BZV55C3V0L0G feature comparison

BZT55C3V0L1G Taiwan Semiconductor

Buy Now Datasheet

BZV55C3V0L0G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code End Of Life Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 85 Ω 85 Ω
JEDEC-95 Code DO-213AA
JESD-30 Code O-LELF-R2
JESD-609 Code e3 e3
Knee Impedance-Max 600 Ω
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Reference Voltage-Nom 3 V 3 V
Reverse Current-Max 4 µA
Reverse Test Voltage 1 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Finish MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL
Terminal Form WRAP AROUND
Terminal Position END
Time@Peak Reflow Temperature-Max (s) 30
Voltage Tol-Max 5% 5%
Working Test Current 5 mA 5 mA
Base Number Matches 1 1

Compare BZT55C3V0L1G with alternatives

Compare BZV55C3V0L0G with alternatives