BZT52-C9V1 vs BZV55-B9V1 feature comparison

BZT52-C9V1 TDK Micronas GmbH

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BZV55-B9V1 NXP Semiconductors

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer ITT SEMICONDUCTOR NXP SEMICONDUCTORS
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JESD-30 Code R-PDSO-G2 O-LELF-R2
Knee Impedance-Max 50 Ω
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY GLASS
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.4 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 9.1 V 9.1 V
Reverse Current-Max 0.1 µA 0.5 µA
Surface Mount YES YES
Technology ZENER ZENER
Terminal Form GULL WING WRAP AROUND
Terminal Position DUAL END
Voltage Temp Coeff-Max 5.915 mV/°C 7 mV/°C
Working Test Current 5 mA 5 mA
Base Number Matches 5 7
Pbfree Code Yes
Rohs Code Yes
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
Case Connection ISOLATED
Dynamic Impedance-Max 15 Ω
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) 260
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30
Voltage Tol-Max 2%

Compare BZT52-C9V1 with alternatives

Compare BZV55-B9V1 with alternatives