BZT52-C9V1 vs BZT52H-C9V1 feature comparison

BZT52-C9V1 Microsemi Corporation

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BZT52H-C9V1 NXP Semiconductors

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Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MICROSEMI CORP NXP SEMICONDUCTORS
Reach Compliance Code compliant unknown
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-F2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.41 W 0.375 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Technology ZENER ZENER
Terminal Finish TIN LEAD Tin (Sn)
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Working Test Current 5 mA 5 mA
Base Number Matches 5 2
Pbfree Code Yes
Package Description R-PDSO-F2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Dynamic Impedance-Max 100 Ω
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reference Voltage-Nom 9.05 V
Time@Peak Reflow Temperature-Max (s) 30
Voltage Tol-Max 6.08%

Compare BZT52-C9V1 with alternatives

Compare BZT52H-C9V1 with alternatives