BZD27C75PT/R7 vs BZD27C75P feature comparison

BZD27C75PT/R7 PanJit Semiconductor

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BZD27C75P Galaxy Semi-Conductor Co Ltd

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC GALAXY SEMI-CONDUCTOR CO LTD
Package Description R-PDSO-F2
Pin Count 2
Reach Compliance Code compliant unknown
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-F2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.8 W 0.8 W
Qualification Status Not Qualified
Reference Voltage-Nom 75 V 75 V
Surface Mount YES YES
Technology ZENER AVALANCHE
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Voltage Tol-Max 5% 6%
Working Test Current 10 mA 10 mA
Base Number Matches 1 4
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 79 V
Breakdown Voltage-Min 70 V
Breakdown Voltage-Nom 75 V
Clamping Voltage-Max 103.5 V
Dynamic Impedance-Max 100 Ω
Forward Voltage-Max (VF) 1.2 V
Non-rep Peak Rev Power Dis-Max 150 W
Operating Temperature-Min -55 °C
Rep Pk Reverse Voltage-Max 62 V
Reverse Current-Max 5 µA
Reverse Test Voltage 62 V

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