BZD27C47PHMH vs BZD27C180P feature comparison

BZD27C47PHMH Taiwan Semiconductor

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BZD27C180P Galaxy Semi-Conductor Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Dynamic Impedance-Max 45 Ω 400 Ω
JESD-30 Code R-PDSO-F2 R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.3 W 0.8 W
Reference Standard AEC-Q101; IEC-61249-2-21; IEC-60-1
Reference Voltage-Nom 47 V 180 V
Reverse Current-Max 1 µA 5 µA
Reverse Test Voltage 36 V 150 V
Surface Mount YES YES
Technology ZENER AVALANCHE
Terminal Finish MATTE TIN
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Voltage Temp Coeff-Max 56.4 mV/°C
Voltage Tol-Max 6.38% 6.4%
Working Test Current 10 mA 5 mA
Base Number Matches 1 5
Breakdown Voltage-Max 191 V
Breakdown Voltage-Min 168 V
Breakdown Voltage-Nom 180 V
Clamping Voltage-Max 229 V
Forward Voltage-Max (VF) 1.2 V
Non-rep Peak Rev Power Dis-Max 150 W
Rep Pk Reverse Voltage-Max 150 V

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