Datasheets
BZD27C180P by:

Zener Diode, 180V V(Z), 6.4%, 150W,

Part Details for BZD27C180P by Galaxy Semi-Conductor Co Ltd

Overview of BZD27C180P by Galaxy Semi-Conductor Co Ltd

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Part Details for BZD27C180P

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BZD27C180P Part Data Attributes

BZD27C180P Galaxy Semi-Conductor Co Ltd
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BZD27C180P Galaxy Semi-Conductor Co Ltd Zener Diode, 180V V(Z), 6.4%, 150W,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 191 V
Breakdown Voltage-Min 168 V
Breakdown Voltage-Nom 180 V
Clamping Voltage-Max 229 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Dynamic Impedance-Max 400 Ω
Forward Voltage-Max (VF) 1.2 V
JESD-30 Code R-PDSO-F2
Non-rep Peak Rev Power Dis-Max 150 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL
Power Dissipation-Max 0.8 W
Reference Voltage-Nom 180 V
Rep Pk Reverse Voltage-Max 150 V
Reverse Current-Max 5 µA
Reverse Test Voltage 150 V
Surface Mount YES
Technology AVALANCHE
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Voltage Tol-Max 6.4%
Working Test Current 5 mA

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