Part Details for BZD27C180P by Galaxy Semi-Conductor Co Ltd
Overview of BZD27C180P by Galaxy Semi-Conductor Co Ltd
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BZD27C180P
BZD27C180P CAD Models
BZD27C180P Part Data Attributes
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BZD27C180P
Galaxy Semi-Conductor Co Ltd
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Datasheet
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BZD27C180P
Galaxy Semi-Conductor Co Ltd
Zener Diode, 180V V(Z), 6.4%, 150W,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | GALAXY SEMI-CONDUCTOR CO LTD | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.50 | |
Breakdown Voltage-Max | 191 V | |
Breakdown Voltage-Min | 168 V | |
Breakdown Voltage-Nom | 180 V | |
Clamping Voltage-Max | 229 V | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
Dynamic Impedance-Max | 400 Ω | |
Forward Voltage-Max (VF) | 1.2 V | |
JESD-30 Code | R-PDSO-F2 | |
Non-rep Peak Rev Power Dis-Max | 150 W | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity | UNIDIRECTIONAL | |
Power Dissipation-Max | 0.8 W | |
Reference Voltage-Nom | 180 V | |
Rep Pk Reverse Voltage-Max | 150 V | |
Reverse Current-Max | 5 µA | |
Reverse Test Voltage | 150 V | |
Surface Mount | YES | |
Technology | AVALANCHE | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Voltage Tol-Max | 6.4% | |
Working Test Current | 5 mA |