BZD27C180P vs BZD27C47PRFG feature comparison

BZD27C180P Galaxy Semi-Conductor Co Ltd

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BZD27C47PRFG Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 191 V
Breakdown Voltage-Min 168 V
Breakdown Voltage-Nom 180 V
Clamping Voltage-Max 229 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE ZENER DIODE
Dynamic Impedance-Max 400 Ω 45 Ω
Forward Voltage-Max (VF) 1.2 V
JESD-30 Code R-PDSO-F2 R-PDSO-F2
Non-rep Peak Rev Power Dis-Max 150 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.8 W 2.3 W
Reference Voltage-Nom 180 V 47 V
Rep Pk Reverse Voltage-Max 150 V
Reverse Current-Max 5 µA 1 µA
Reverse Test Voltage 150 V 36 V
Surface Mount YES YES
Technology AVALANCHE ZENER
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Voltage Tol-Max 6.4% 6.38%
Working Test Current 5 mA 10 mA
Base Number Matches 5 1
Package Description R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Reference Standard IEC-61249-2-21
Terminal Finish MATTE TIN
Voltage Temp Coeff-Max 56.4 mV/°C

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