BZD27C180P
vs
BZD27C47PRFG
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
191 V
Breakdown Voltage-Min
168 V
Breakdown Voltage-Nom
180 V
Clamping Voltage-Max
229 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
ZENER DIODE
Dynamic Impedance-Max
400 Ω
45 Ω
Forward Voltage-Max (VF)
1.2 V
JESD-30 Code
R-PDSO-F2
R-PDSO-F2
Non-rep Peak Rev Power Dis-Max
150 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.8 W
2.3 W
Reference Voltage-Nom
180 V
47 V
Rep Pk Reverse Voltage-Max
150 V
Reverse Current-Max
5 µA
1 µA
Reverse Test Voltage
150 V
36 V
Surface Mount
YES
YES
Technology
AVALANCHE
ZENER
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Voltage Tol-Max
6.4%
6.38%
Working Test Current
5 mA
10 mA
Base Number Matches
5
1
Package Description
R-PDSO-F2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Reference Standard
IEC-61249-2-21
Terminal Finish
MATTE TIN
Voltage Temp Coeff-Max
56.4 mV/°C
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