BYV79EB-100 vs UGB18BCTHE3/81 feature comparison

BYV79EB-100 NXP Semiconductors

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UGB18BCTHE3/81 Vishay Semiconductors

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS VISHAY SEMICONDUCTORS
Package Description R-PSSO-G2 R-PSSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature SURGE CAPABILITY FREE WHEELING DIODE, HIGH RELIABILITY
Application ULTRA FAST SOFT RECOVERY EFFICIENCY
Case Connection CATHODE CATHODE
Configuration SINGLE COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Non-rep Pk Forward Current-Max 160 A 175 A
Number of Elements 1 2
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 14 A 9 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.03 µs 0.03 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 1 2
Pbfree Code Yes
Rohs Code Yes
Part Package Code D2PAK
Pin Count 3
Forward Voltage-Max (VF) 0.95 V
JEDEC-95 Code TO-263AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) 245
Terminal Finish TIN OVER NICKEL
Time@Peak Reflow Temperature-Max (s) 30

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