BYV79EB-100 vs VS-MURB1620CTL-M3 feature comparison

BYV79EB-100 NXP Semiconductors

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VS-MURB1620CTL-M3 Vishay Intertechnologies

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer NXP SEMICONDUCTORS VISHAY INTERTECHNOLOGY INC
Package Description R-PSSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature SURGE CAPABILITY FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
Application ULTRA FAST SOFT RECOVERY ULTRA FAST RECOVERY
Case Connection CATHODE CATHODE
Configuration SINGLE COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Non-rep Pk Forward Current-Max 160 A 100 A
Number of Elements 1 2
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 14 A 8 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 100 V 200 V
Reverse Recovery Time-Max 0.03 µs 0.035 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 1 1
Rohs Code Yes
Factory Lead Time 13 Weeks
Date Of Intro 2018-01-29
Samacsys Manufacturer Vishay
Breakdown Voltage-Min 200 V
Forward Voltage-Max (VF) 0.975 V
JEDEC-95 Code TO-263AB
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 5 µA
Reverse Test Voltage 200 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare BYV79EB-100 with alternatives

Compare VS-MURB1620CTL-M3 with alternatives