BYV79EB-100
vs
VS-MURB1620CTL-M3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
NXP SEMICONDUCTORS
VISHAY INTERTECHNOLOGY INC
Package Description
R-PSSO-G2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
SURGE CAPABILITY
FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
Application
ULTRA FAST SOFT RECOVERY
ULTRA FAST RECOVERY
Case Connection
CATHODE
CATHODE
Configuration
SINGLE
COMMON CATHODE, 2 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Non-rep Pk Forward Current-Max
160 A
100 A
Number of Elements
1
2
Number of Phases
1
1
Number of Terminals
2
2
Output Current-Max
14 A
8 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
100 V
200 V
Reverse Recovery Time-Max
0.03 µs
0.035 µs
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Base Number Matches
1
1
Rohs Code
Factory Lead Time
13 Weeks
Date Of Intro
2018-01-29
Samacsys Manufacturer
Vishay
Breakdown Voltage-Min
200 V
Forward Voltage-Max (VF)
0.975 V
JEDEC-95 Code
TO-263AB
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reverse Current-Max
5 µA
Reverse Test Voltage
200 V
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare BYV79EB-100 with alternatives
Compare VS-MURB1620CTL-M3 with alternatives